? 2003 ixys all rights reserved symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. v ge(th) i c = 250 a, v ce = v ge 3.0 5.0 v i ces v ce = v ces t j = 25 c 650 a v ge = 0 v t j = 125 c 5 ma i ges v ce = 0 v, v ge = 20 v 100 na v ce(sat) i c = 50 a, v ge = 15 v t j = 25 c 2.1 2.5 v note 1 t j = 125 c 1.8 v hiperfast tm igbt with diode symbol test conditions maximum ratings v ces t j = 25 c to 150 c 600 v v cgr t j = 25 c to 150 c; r ge = 1 m ? 600 v v ges continuous 20 v v gem transient 30 v i c25 t c = 25 c (limited by leads) 75 a i c110 t c = 110 c60a i cm t c = 25 c, 1 ms 300 a ssoa v ge = 15 v, t vj = 125 c, r g = 10 ? i cm = 100 a (rbsoa) clamped inductive load @ v ce 600 v p c t c = 25 c 480 w t j -55 ... +150 c t jm 150 c t stg -55 ... +150 c m d mounting torque, to-264 1.13/10 nm/lb.in. weight to-264 10 g plus247 6 g maximum lead temperature for soldering 300 c 1.6 mm (0.062 in.) from case for 10 s g = gate c = collector e = emitter tab = collector features ? very high frequency igbt and anti-parallel fred in one package ? square rbsoa ? high current handling capability ? mos gate turn-on for drive simplicity ? fast recovery epitaxial diode (fred) with soft recovery and low i rm applications ? switch-mode and resonant-mode power supplies ? uninterruptible power supplies (ups) ? dc choppers ? ac motor speed control ? dc servo and robot drives advantages ? space savings (two devices in one package) ? easy to mount with 1 screw g c e to-264 aa (ixgk) ds99044a(09/03) plus247 (ixgx) v ces = 600 v i c25 = 75 a v ce(sat) = 2.5 v t fi(typ) = 35 ns (tab) (tab) ixgk 60n60c2d1 ixgx 60n60c2d1 c2-class high speed igbts advance technical data
ixys reserves the right to change limits, test conditions, and dimensions. ixys mosfets and igbts are covered by one or more of the following u.s. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728b1 6,259,123b1 6,306,728b 1 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065b1 6,162,665 6,534,343 symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. g fs i c = 50 a; v ce = 10 v, 40 58 s note 1 c ies 3900 pf c oes v ce = 25 v, v ge = 0 v, f = 1 mhz 280 pf c res 97 pf q g 146 nc q ge i c = 50 a, v ge = 15 v, v ce = 0.5 v ces 28 nc q gc 50 nc t d(on) 18 ns t ri 25 ns t d(off) 95 150 ns t fi 35 ns e off 0.48 0.8 mj t d(on) 18 ns t ri 25 ns e on 0.9 mj t d(off) 130 ns t fi 80 ns e off 1.2 mj r thjc 0.26 k/w r thck 0.15 k/w inductive load, t j = 25 c i c = 50 a, v ge = 15 v v ce = 400 v, r g = r off = 2.0 ? inductive load, t j = 125 c i c = 50 a, v ge = 15 v v ce = 400 v, r g = r off = 2.0 ? plus247 outline dim. millimeter inches min. max. min. max. a 4.83 5.21 .190 .205 a 1 2.29 2.54 .090 .100 a 2 1.91 2.16 .075 .085 b 1.14 1.40 .045 .055 b 1 1.91 2.13 .075 .084 b 2 2.92 3.12 .115 .123 c 0.61 0.80 .024 .031 d 20.80 21.34 .819 .840 e 15.75 16.13 .620 .635 e 5.45 bsc .215 bsc l 19.81 20.32 .780 .800 l1 3.81 4.32 .150 .170 q 5.59 6.20 .220 0.244 r 4.32 4.83 .170 .190 terminals: 1 - gate 2 - drain (collector) 3 - source (emitter) 4 - drain (collector) ixgk 60n60c2d1 ixgx 60n60c2d1 to-264 aa outline millimeter inches min. max. min. max. a 4.82 5.13 .190 .202 a1 2.54 2.89 .100 .114 a2 2.00 2.10 .079 .083 b 1.12 1.42 .044 .056 b1 2.39 2.69 .094 .106 b2 2.90 3.09 .114 .122 c 0.53 0.83 .021 .033 d 25.91 26.16 1.020 1.030 e 19.81 19.96 .780 .786 e 5.46 bsc .215 bsc j 0.00 0.25 .000 .010 k 0.00 0.25 .000 .010 l 20.32 20.83 .800 .820 l1 2.29 2.59 .090 .102 p 3.17 3.66 .125 .144 q 6.07 6.27 .239 .247 q1 8.38 8.69 .330 .342 r 3.81 4.32 .150 .170 r1 1.78 2.29 .070 .090 s 6.04 6.30 .238 .248 t 1.57 1.83 .062 .072 dim. reverse diode (fred) characteristic values (t j = 25c, unless otherwise specified) symbol test conditions min. typ. max. v f i f = 60 a, v ge = 0 v, 2.1 v note 1 t j = 150 c 1.4 i rm i f = 60 a, v ge = 0 v, -di f /dt = 100 a/ t j = 100 c 8.3 a v r = 100 v t rr i f = 1 a; -di/dt = 200 a/ms; v r = 30 v 35 n s r thjc 0.85 k/w note 1: pulse test, t 300 s, duty cycle 2 %
? 2003 ixys all rights reserved ixgk 60n60c2d1 ixgx 60n60c2d1 fig. 2. extended output characteristics @ 25 deg. c 0 25 50 75 10 0 12 5 15 0 17 5 200 11 .5 22.533.544.5 v ce - volts i c - amperes v g e = 1 5v 1 3v 1 1v 9v 5v 7v fig. 3. output characteristics @ 125 deg. c 0 10 20 30 40 50 60 70 80 90 10 0 0.511.522.533.5 v ce - volts i c - amperes v g e = 1 5v 1 3v 1 1v 5v 7v 9v fig. 1. output characteristics @ 25 deg. c 0 10 20 30 40 50 60 70 80 90 10 0 0.511.522.533.5 v ce - volts i c - amperes v g e = 1 5v 1 3v 1 1v 7v 5v 9v fig. 6. input admittance 0 25 50 75 10 0 12 5 15 0 17 5 200 3.5 4 4.5 5 5.5 6 6.5 7 7.5 8 8.5 v ge - volts i c - amperes t j = 1 25 o c 25 o c -40 o c fig. 4. temperature dependence of v ce(sat) 0.5 0.6 0.7 0.8 0.9 1 1. 1 1. 2 25 50 75 100 125 150 t j - degrees centigrade v c e (sat) - normalized i c = 1 00a i c = 50a i c = 25a v g e = 1 5v fig. 5. collector-to-emitter voltage vs. gate-to-emitter voltage 1 1. 5 2 2.5 3 3.5 4 4.5 5 5 6 7 8 9101112131415 v ge - volts v ce - volts t j = 25 o c i c = 1 00a 50a 25a
ixys reserves the right to change limits, test conditions, and dimensions. ixys mosfets and igbts are covered by one or more of the following u.s. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728b1 6,259,123b1 6,306,728b 1 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065b1 6,162,665 6,534,343 ixgk 60n60c2d1 ixgx 60n60c2d1 fig. 12. capacitance 10 10 0 10 0 0 10 0 0 0 0 5 10 15 20 25 30 35 40 v ce - volts capacitance - pf c ies c oes c res f = 1 m hz fig. 11. gate charge 0 3 6 9 12 15 0 20406080100120140160 q g - nanocoulombs v g e - volts v c e = 300v i c = 50a i g = 1 0ma fig. 7. transconductance 0 10 20 30 40 50 60 70 80 90 10 0 0 255075100125150175200 i c - amperes g f s - siemens t j = -40 o c 25 o c 1 25 o c fig. 8. dependence of e off on r g 0 1 2 3 4 5 6 24681 01 21 41 6 r g - ohms e off - millijoules i c = 75a i c = 25a t j = 1 25 o c v ge = 1 5v v ce = 400v i c = 50a i c = 1 00a fig. 9. dependence of e off on i c 0 1 2 3 4 5 20 30 40 50 60 70 80 90 100 i c - amperes e off - millijoules r g = 2 ohms r g = 1 0 ohms - - - - - t j = 1 25 o c v g e = 1 5v v c e = 400v t j = 25 o c fig. 10. dependence of e off on temperature 0 1 2 3 4 5 25 50 75 100 125 t j - degrees centigrade e off - millijoules i c = 1 00a i c = 50a i c = 25a v g e = 1 5v v c e = 400v r g = 2 ohms r g = 1 0 ohms - - - - - i c = 75a
? 2003 ixys all rights reserved 200 600 1000 0 400 800 80 90 100 110 120 130 140 0.00001 0.0001 0.001 0.01 0.1 1 0.0001 0.001 0.01 0.1 1 0 40 80 120 160 0.0 0.5 1.0 1.5 2.0 k f t vj c -di f /dt t s k/w 0 200 400 600 800 1000 0 5 10 15 20 0.0 0.4 0.8 1.2 1.6 v fr di f /dt v 200 600 1000 0 400 800 0 20 40 60 80 100 1000 0 1000 2000 3000 4000 012 0 20 40 60 80 100 120 140 160 i rm q r i f a v f -di f /dt -di f /dt a/ s a v nc a/ s a/ s t rr ns t fr a/ s s dsep 2x61-06a z thjc i f =120a i f = 60a i f = 30a t vj = 100c v r = 300v t vj = 100c i f = 60a fig. 14 peak reverse current i rm versus -di f /dt fig. 13 reverse recovery charge q r versus -di f /dt fig. 12 forward current i f versus v f t vj = 100c v r = 300v t vj = 100c v r = 300v i f =120a i f = 60a i f = 30a q r i rm fig. 15 dynamic parameters q r , i rm versus t vj fig. 16 recovery time t rr versus -di f /dt fig. 17 peak forward voltage v fr and t fr versus di f /dt i f =120a i f = 60a i f = 30a t fr v fr fig. 18 transient thermal resistance junction to case constants for z thjc calculation: ir thi (k/w) t i (s) 1 0.3073 0.0055 2 0.3533 0.0092 3 0.0887 0.0007 4 0.1008 0.0399 t vj = 25c t vj =150c t vj =100c ixgk 60n60c2d1 ixgx 60n60c2d1
|
